Program

Technical Program (updated on Oct. 4, FINAL VERSION)

Technical Program Correction (updated on Oct. 4)

Time Table of Technical Sessions

TimeTable-final4.jpg

Guidelines for Oral and Poster Presentations

Oral Presentations

  • The time allotted for contributed oral presentations is 15 minutes plus 5 minutes for questions and answers.
  • For invited presentations, the total time will be 30 minutes (and 45 minutes for plenary lectures), including 5 minutes for questions and answers.
  • Speakers are requested to transfer their PowerPoint files onto the computer in the oral session room (TENZUI or JUYO) on the 4th floor of the Seagaia Convention Center during the coffee break or lunch break preceding the session.
  • The computer is installed with Windows 7 Professional OS (32 bit) and Microsoft Office Standard 2010 (PowerPoint 2010).
  • It will not be possible to transfer your file once the session has started. In order to avoid technical problems and delays between consecutive presentations, it will not be possible for speakers to use their own personal computers.
  • Speakers may utilize the speaker ready room (Amber) located on the 4th floor of the Seagaia Convention Center to preview/modify their presentations, or prepare any documents. The room is equipped with computers installed with the same OS and presentation software (PowerPoint 2010).
  • Be sure to arrive at the oral session room at least 10 minutes before the beginning of the session and greet the chair persons.
  • It is preferred that all the speakers in a session remain in the room for the entire session. After the session, the audience can talk with the speakers about their presentations. The aims are to promote exchange among participants and extend the questions and answers session in a more relaxed atmosphere, while enjoying the coffee or lunch break.

Poster Presentations

  • Contributed posters will be exhibited in both the Foyer and RANGYOKU on the 4th floor of the Seagaia Convention Center.
  • Authors are requested to put up their posters on the allotted poster board during the lunch break preceding the poster session. Please refer to the program for the specific location for your poster. The poster number will be displayed in the upper left corner of the poster board.
  • Please attach your poster to the board using the push-pins available in the poster area.
  • The maximum size of the poster is 90 cm wide and 225 cm high. A single sheet poster that is A0 portrait format (84.10 x 118.90 cm) will be suitable. Authors are requested to be available near their posters during the poster session.
  • Posters must be removed at the end of the session. The organizers are not responsible for posters not collected by the authors.
  • It is the responsibility of the authors to bring, put up and take down their posters.

Invited Poster Presentations

  • Invited posters will be exhibited in the Foyer on the 4th floor of the Seagaia Convention Center.
  • Authors of invited posters are requested to put up their posters on the allotted poster board during the lunch break on Monday. Please refer to the program for the specific location for your poster. The poster number will be displayed in the upper left corner of the poster board.
  • Please attach posters to the board using push-pins available in the poster area.
  • The available size of the poster board for invited posters is 180 cm wide and 225 cm high.
  • Invited posters will be exhibited from Monday to Thursday. Authors of invited posters are requested to be available near their posters at least during the poster session on the designated day of the conference and are also expected to be available as much as possible during the poster sessions on the other days to promote exchange among participants.
  • Posters must be removed at the end of the poster session on Thursday. The organizers are not responsible for posters not collected by the authors.
  • It is the responsibility of the authors to bring, put up and take down their posters.
  • Authors of invited posters are also requested to give a short presentation (3 minutes, with no questions and answers from the audience) in the dedicated session held immediately after the plenary session on Monday morning.

For questions regarding oral and poster presentations, please contact Conference Support at icscrm2013reg@ech.co.jp.

Plenary Speakers

Strategic Energy Policy for a Sustainable Society - Expectations for SiC Power Devices -
Dr. Kazuo Kyuma (Mitsubishi Electric Corp./Council for Science and Technology Policy, Japan)
Progress in High Voltage SiC and GaN Power Switching Devices
Prof. T. Paul Chow (Rensselaer Polytechnic Institute, USA)
High Speed Rail Awaits the Next Breakthrough of Power Semiconductors
Dr. Tetsuo Uzuka (Railway Technical Research Institute, Japan)

Invited Speakers

  • H. Daikoku (Toyota Motor, Japan): Surface Shape-Controlled Solution Growth of 4H-SiC Bulk Crystal
  • D. Chaussende (LMGP, France): Open Issues in SiC Bulk Growth
  • H. Tsuchida (CRIEPI, Japan): Evolution of Fast 4H-SiC CVD Growth and Defect Reduction Techniques
  • B. Thomas (Dow Corning, USA): Progress in Large-Area 4H-SiC Epitaxial Layer Growth in a Warm-Wall Planetary Reactor
  • K. Kojima (FUPET/AIST, Japan): Development of Homoepitaxial Growth Technique on 4H-SiC Vicinal Off Angled Substrate
  • N.T. Son (Linköping Univ., Sweden): The Carbon Vacancy in SiC
  • D. Awschalom (Univ. Chicago/UCSB, USA): Engineering Defect Spin States in SiC for Sensing and Computation
  • F. Giannazzo (CNR-IMM, Italy): Nanoscale Characterization of SiC Interfaces and Devices
  • M. Nagano (CRIEPI, Japan): Photoluminescence Imaging and Discrimination of Threading Dislocations in 4H-SiC Epilayers
  • H. Yoshioka (Kyoto Univ./AIST, Japan): Accurate Characterization of Interface State Density of SiC MOS Structures and the Impacts on Channel Mobility
  • A.J. Lelis (U.S. Army Res. Lab., USA) : Threshold-Voltage Stability: Key Reliability Issue for SiC Power MOSFETs
  • K. Shiraishi (Nagoya Univ./Univ. Tsukuba, Japan): Intrinsic SiC Oxidation Problems Obtained by First Principle Calculations
  • N. Thierry-Jebali (INSA de Lyon, France): Applications of Vapor-Liquid-Solid Selective Epitaxy of Highly p-Type Doped 4H-SiC : PiN Diodes with Peripheral Protection and Improvement of Specific Contact Resistance of Ohmic Contacts
  • T. Nakamura (ROHM, Japan): The Development of Advanced SiC Devices and Modules
  • L. Cheng (Cree, USA): Strategic Overview of High-Voltage SiC Power Device Development Aiming at Global Energy Savings
  • M. Kitabatake (FUPET, Japan): Electrical Characteristics/Reliability Affected by Defects Analyzed by the Integrated Evaluation Platform for SiC Epitaxial Films
  • H.P. Nee (KTH, Sweden): High-Efficiency Power Conversion Using Silicon Carbide Power Electronics
  • P. Friedrichs (Infineon, Germany): SiC Power Devices as Enabler for High Power Density - Aspects and Prospects
  • H. Niwa (Kyoto Univ., Japan): Temperature Dependence of Impact Ionization Coefficients in 4H-SiC
  • S. Shikata (AIST, Japan): Diamond Based Power Device
  • W. de Heer (Georgia Tech., USA): Exceptional Ballistic Transport in Epitaxial Graphene Nanoribbons
  • P. Parikh (Transphorm, USA): Commercialization of High 600 V GaN-on-Silicon Power HEMTs

Invited Posters

  • H. Kondo (FUPET/DENSO, Japan): Development of RAF Quality 150mm 4H-SiC Wafer
  • K. Alassaad (Université Claude Bernard Lyon 1, France): Ge Assisted SiC Epitaxial Growth by CVD on SiC Substrate
  • F. Wu (Stony Brook University, USA): Study of V and Y Shape Stacking Faults Formation in 4H-SiC Epilayer
  • R. Kosugi (FUPET/AIST, Japan): Development of SiC Super-Junction (SJ) Device by a Multi-Epitaxial Growth

Industrial Session

Commercially available technologies for materials, devices and fabrication/characterization equipment, as well as recent market research and other industrial information will be presented in the Industrial Session on Monday evening, September 30.


Last-modified: 2013-10-08 (Tue) 01:27:44 (1863d)